advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v simple drive requirement r ds(on) 5m fast switching characteristic i d 80a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t c =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a 62 /w data & specifications subject to change without notice thermal data parameter 28.8 201106091 1 maximum thermal resistance, junction-ambient storage temperature range operating junction temperature range -55 to 175 -55 to 175 30 total power dissipation gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 80 continuous drain current, v gs @ 10v 60 pulsed drain current 1 220 total power dissipation 2.42 AP85U03GP-HF 60 halogen-free product parameter rating drain-source voltage a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-220 package is widly preferred for commercial-industrial powe r applications and suited for low voltage applications such as dc/dc converters. g d s g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 5 m ? v gs =4.5v, i d =30a - - 9 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 55 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 37 60 nc q gs gate-source charge v ds =24v - 7.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 23 - nc t d(on) turn-on delay time v ds =15v - 12.5 - ns t r rise time i d =30a - 75 - ns t d(off) turn-off delay time r g =3.3 -40- ns t f fall time v gs =10v - 90 - ns c iss input capacitance v gs =0v - 2900 4640 pf c oss output capacitance v ds =25v - 435 - pf c rss reverse transfer capacitance f=1.0mhz - 395 - pf r g gate resistance f=1.0mhz - 1.2 1.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 30 - ns q rr reverse recovery charge di/dt=100a/s - 35 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test 3.package limitation current is 80a . 4.starting t j =25 o c , v dd =20v , l=0.1mh , r g =25 , i as =24a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP85U03GP-HF
a p85u03gp-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 200 240 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 3 4 5 6 7 8 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th) (v) i d =1ma
AP85U03GP-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 1 10 100 1000 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =15v v ds =18v v ds =24v 0 1000 2000 3000 4000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge operation in this area limited by r ds(on) 0 20 40 60 80 100 120 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j =-40 o c
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